Since the Flexible field effect transistor (F-FET) is the building block of any sophisticated electronic circuit, particularly in the area of wearable electronics and biomedical sensors, it has drawn a lot of attention recently. It is usually fabricated using stretchable semiconductors over polymeric substrates. This paper displays a brief overview of the current fabrication techniques of the F-FET, specifically in terms of the type of substrates and nano semiconductor technologies. As for the applications, flexible devices such as graphene, carbon nanotubes, and nanoparticles seem to be a candidate for future flexible devices due to their excitant electronic and stretchable characteristics.
Sahib Al-Mumen,H . (2021). Flexible field effect transistor construction techniques, a brief review. Al-Qadisiyah Journal for Engineering Sciences, 14(2), 112-116. doi: 10.30772/qjes.v14i2.753
MLA
Sahib Al-Mumen,H . "Flexible field effect transistor construction techniques, a brief review", Al-Qadisiyah Journal for Engineering Sciences, 14, 2, 2021, 112-116. doi: 10.30772/qjes.v14i2.753
HARVARD
Sahib Al-Mumen H. (2021). 'Flexible field effect transistor construction techniques, a brief review', Al-Qadisiyah Journal for Engineering Sciences, 14(2), pp. 112-116. doi: 10.30772/qjes.v14i2.753
CHICAGO
H Sahib Al-Mumen, "Flexible field effect transistor construction techniques, a brief review," Al-Qadisiyah Journal for Engineering Sciences, 14 2 (2021): 112-116, doi: 10.30772/qjes.v14i2.753
VANCOUVER
Sahib Al-Mumen H. Flexible field effect transistor construction techniques, a brief review. QJES. 2021;14(2):112-116. doi: 10.30772/qjes.v14i2.753
